HVU131 Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Switching

HVU131
Main Characteristic
10^–2
10^–4
10^–6
Ta= 50°C
10^–8
Ta= 25°C
10^–10
10^–12
0 0.2 0.4 0.6 0.8 1.0
Forward voltage V_F (V)
Fig.1 Forward current vs. Forward voltage
f = 1MHz
10
1.0
0.1
1.0
10
100
Reverse voltage V_R (V)
Fig.3 Capacitance vs. Reverse voltage
10^–7
10^–8
10^–9
10^–10
10^–11
10^–12
Ta= 50°C
Ta= 25°C
10^–13
0
20 40
60 80 100
Reverse voltage V_R (V)
Fig.2 Reverse current vs. Reverse voltage
10³
f = 100MHz
10²
10¹
10⁰
10^–1
10^–5
10^–4
10^–3
10^–2
Forward current I_F (A)
Fig.4 Forward resistance vs. Forward current
Rev.6.00 Oct 29, 2004 page 3 of 4