HVU131 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Switching

HVU131
Absolute Maximum Ratings
Item
Peak reverse voltage
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
V_RM
V_R
I_F
Pd
Tj
Tstg
Symbol
Value
65
60
100
150
125
−55 to +125
(Ta = 25°C)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse current
I_R
Forward voltage
V_F
Capacitance
C
Forward resistance
r_f
—
—
0.1
µA V_R = 60 V
—
—
1.0
V
I_F = 10 mA
—
—
0.8
pF V_R = 1 V, f = 1 MHz
—
—
1.0
Ω
I_F = 10 mA, f = 100 MHz
Rev.6.00 Oct 29, 2004 page 2 of 4