HRD0103C Datasheet, PDF (3/6 Pages) Renesas Technology Corp – Silicon Schottky Barrier Diode for Rectifying

HRD0103C
Main Characteristics
1.0
10^–1
Pulse test
10^{–2 Ta = 75°C}
10^–3
Ta = 25°C
10^–4
10^–5
10^–6
0
0.2 0.4 0.6 0.8 1.0
Forward voltage V_F (V)
Fig.1 Forward current vs. Forward voltage
0.12
0.10
0.08
0A t
T
Tj = 25°C
D = —t
T
0.06
D=1/6
sin(θ=180°)
D=1/3
D=1/2
DC
0.04
0.02
0
0
0.05
0.10
0.15
Forward current I_F (A)
Fig3. Forward power dissipation vs. Forward current
10^–3
10^–4
10^–5
10^–6
10^–7
Ta = 75°C
Ta = 50°C
Ta = 25°C
Pulse test
10^–8
0
10 20 30 40 50
Reverse voltage V_R (V)
Fig.2 Reverse current vs. Reverse voltage
0.030
0V
0.025
0.020
t
T
Tj = 125°C
D = —t
T
D=5/6
D=2/3
0.015
D=1/2
0.010
sin(θ=180°)
0.005
0
0
10
20
30
40
Reverse voltage V_R (V)
Fig4. Reverse power dissipation vs. Reverse voltage
Rev.1.00, Aug.29.2003, page 3 of 5