HRD0103C Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Schottky Barrier Diode for Rectifying

HRD0103C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Average rectified current
Peak forward surge current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. See from Fig.3 to Fig.5.
2. 10 ms sine wave 1 pulse.
Symbol
V_RM *¹
V_R
I_O *¹
I_FM
I_FSM *²
Tj
Tstg
Value
Unit
30
V
30
V
100
mA
300
mA
1
A
125
°C
–55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit Test Condition
Forward voltage
Reverse current
Capacitance
Thermal resistance
V_F1
—
V_F2
—
I_R1
—
I_R2
—
C
—
Rth(j-a) —
—
0.4
—
0.6
—
0.1
—
0.2
—
8.0
600
—
V
µA
pF
°C/W
I_F = 10 mA
I_F = 100 mA
V_R = 5 V
V_R = 10 V
V_R = 0.5 V, f = 1 MHz
Polyimide board *¹
Note: 1. Polyimide board
20h×15w×0.8t
1.5
Unit: mm
1.5
2. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.1.00, Aug.29.2003, page 2 of 5