HRC0203B Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

HRC0203B
Main Characteristic
1.0
10^–1
Ta = 75°C
10^–2
10^–3
Ta = 25°C
Pulse test
10^–4
10^–5
10^–6
0
0.2 0.4 0.6 0.8 1.0
Forward voltage V_F (V)
Fig.1 Forward current vs. Forward voltage
0.30
0.25
0.20
0A t
T
Tj = 25°C
D = —t
T
0.15
0.10
0.05
D=1/6
D=1/3
sin(θ=180°)
D=1/2
DC
0
0 0.05 0.10 0.15 0.20 0.25
Forward current I_F (A)
Fig3. Forward power dissipation vs. Forward current
10^–2
10^–3
Pulse test
10^–4
10^–5
10^–6
Ta = 75°C
Ta = 25°C
10^–7
0
10 20 30 40 50
Reverse voltage V_R (V)
Fig.2 Reverse current vs. Reverse voltage
0.6
0V
0.5
t
T D = —t
T
Tj = 125°C
0.4
0.3
0.2
0.1
D=5/6
D=2/3
D=1/2
sin(θ=180°)
0
0
10
20
30
40
Reverse voltage V_R (V)
Fig4. Reverse power dissipation vs. Reverse voltage
Rev.1.00, Nov.26.2003, page 3 of 5