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HRC0203B Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying | |||
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HRC0203B
Absolute Maximum Ratings
(Ta = 25°C)
Item
Repetitive peak reverse voltage
Average rectified current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Notes: 1. See from Fig.3 to Fig.5.
2. 10 ms sine wave 1 pulse.
Symbol
VRRM *1
Io *
IFSM *
Tj
Tstg
Value
Unit
30
V
200
mA
3
A
125
°C
â55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Forward voltage
VF
â
â
Reverse current
IR
â
â
Thermal resistance Rth(j-a) â
500
Note: 1. Polyimide board
20hÃ15wÃ0.8t
1.5
Max
0.52
10
â
Unit
V
µA
°C/W
Test Condition
IF = 200 mA
VR = 30 V
Polyimide board *1
Unit: mm
1.5
Rev.1.00, Nov.26.2003, page 2 of 5
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