HD74CBT1G125_15 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Single FET Bus Switch

HD74CBT1G125
DC Electrical Characteristics
(Ta = −40 to 85°C)
Item
Symbol V_CC (V)
Min Typ ^*1 Max Unit
Test conditions
Clamp diode voltage
V_IK
4.5
—
—
–1.2 V I_IN = –18 mA
Input voltage
V_IH
4.0 to 5.5 2.0
—
—
V
V_IL
4.0 to 5.5 —
—
0.8
On-state switch resistance ^*2 R_ON
4.0
—
14
20
V_IN = 2.4 V, I_IN = 15 mA
Typ at V_CC = 4.0 V
4.5
—
5
7
Ω VIN = 0 V, IIN = 64 mA
4.5
—
5
7
V_IN = 0 V, I_IN = 30 mA
4.5
—
10
15
V_IN = 2.4 V, I_IN = 15 mA
Input current
I_IN
0 to 5.5
—
—
±1.0 μA V_IN = 5.5 V or GND
Off-state leakage current
I_OZ
5.5
—
—
±1.0 μA 0 ≤ A, B ≤ V_CC
Quiescent supply current
I_CC
5.5
—
—
1.0 μA V_IN = V_CC or GND, I_O = 0 mA
Increase in I_CC per input ^*3
ΔI_CC
One input at 3.4 V,
5.5
—
—
2.5 mA
other inputs at V_CC or GND
Notes: For condition shown as Min or Max use the appropriate values under recommended operating conditions.
1. All typical values are at V_CC = 5 V (unless otherwise noted), Ta = 25°C.
2. Measured by the voltage drop between the A and B terminals at the indicated current through the switch. On-
state resistance is determined by the lower voltage of the two (A or B) terminals.
3. This is the increase in supply current for each input that is at the specified TTL voltage level rather than V_CC
or GND.
Capacitance
Item
Symbol V_CC (V) Min Typ Max Unit
Control input capacitance
C_IN
5.0
—
3
— pF
Input / output capacitance
C_{I/O (OFF)}
5.0
—
5
— pF
Note: This parameter is determined by device characterization is not production tested.
(Ta = 25°C)
Test conditions
V_IN = 0 or 3 V
V_O = 0 or 3 V, OE = V_CC
R04DS0015EJ0200 Rev.2.00
Jan 10, 2014
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