HAT2203C Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2203C
Main Characteristics
Power vs. Temperature Derating
1600
Test Conditions:
When using the glass epoxy board
1200 ^{(FR4 40 x 40 x 1.6 mm)}
800
400
0
50
100
150
200
Case Temperature Ta (°C)
Typical Output Characteristics
10
10 V
Pulse Test
8
2.5 V
6
4.5 V
3V
2V
4
1.5 V
2
VGS = 1 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
ID = 2 A
100
1A
0.5 A
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Maximum Safe Operation Area
-100
Ta = 25°C,1 shot Pulse
-30 ^{When using the FR4 board.}
-10
10 µs 100 µs
-3
-1
-0.3
PW
=
1
10
ms
ms
-0.1
-0.03
Operation in
this area is
limited by R_DS(on)
-0.01
-0.01
-0.1 -0.3 -1 -3 -10 -30 -100
Drain to Source Voltage VDS (V)
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
10
V_DS = 10 V
25°C
Pulse Test
8
−25°C
6
Tc = 75 °C
4
2
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
V_GS = 2.5V
100
4.5V
10
0.1
Pulse Test
Ta = 25 °C
1
10
100
Drain Current I_D (A)
Rev.4.00 May.19, 2005 page 3 of 6