HAT2203C Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Power Switching

HAT2203C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to Source breakdown voltage V_(BR)DSS
20
—
—
V
I_D = 10 mA, V_GS = 0
Gate to Source breakdown voltage V_(BR)GSS ±12
I_G = ±10 µA, V_DS = 0
Gate to Source leak current
I_GSS
—
—
±10
µA
V_GS = ±10 V, V_DS = 0
Drain to Source leak current
I_DSS
—
—
1
µA
V_DS = 20 V, V_GS = 0
Gate to Source cutoff voltage
V_GS(off)
0.4
—
1.4
V
V_DS = 10 V, I_D = 1 mA
Drain to Source on state resistance R_DS(on)
—
69
90
mΩ
I_D = 1 A, V_GS = 4.5 V^Note3
R_DS(on)
—
107
150
mΩ
I_D = 1 A, V_GS = 2.5 V^Note3
Forward transfer admittance
|yfs|
3
4.5
—
S
I_D = 1 A, V_DS = 10 V ^Note3
Input capacitance
Ciss
—
165
—
pF
V_DS = 10 V
Output capacitance
Coss
—
50
—
pF
V_GS = 0
Reverse transfer capacitance
Crss
—
20
—
pF f = 1 MHz
Turn - on delay time
t_d(on)
—
Rise time
t_r
—
Turn - off delay time
t_d(off)
—
Fall time
t_f
—
Total Gate charge
Qg
—
Gate to Source charge
Qgs
—
Gate to Drain charge
Qgd
—
Body - Drain diode forward voltage
V_DF
—
Notes: 3. Pulse test
6
—
5
—
20
—
4
—
1.8
—
0.4
—
0.4
—
0.8
1.1
ns I_D = 1 A
ns
V_GS = 10 V
ns
R_L = 10 Ω
ns
Rg = 4.7 Ω
nC V_DD = 10 V
nC ^VGS ^{= 4.5 V}
nC
I_D = 2 A
V
I_F = 2 A, V_GS = 0 ^Note3
Rev.4.00 May.19, 2005 page 2 of 6