HAT2187WP Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2187WP
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
10 V
Pulse Test
7V
6V
16
12
5.75 V
8
5.5 V
5.25 V
4
V_GS = 5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
4
Pulse Test
3
2
I_D = 17 A
1
8.5 A
5A
0
4
8
12
16
20
Gate to Source Voltage V_GS (V)
Rev.5.00, Sep.02,2005, page 3 of 6
Maximum Safe Operation Area
100
30
10
1 _ms
10010_µs^µs
3
1
0.3 ^{Operation in this}
area is limited by
0.1 ^RDS(on) _{PW = 10 ms}
0.03
(1shot)
0.01
0.003
0.001 ^{Ta = 25°C}
1 3 10
DC Operation
(Tc = 25°C)
30 100 300
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
4
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
V_GS = 10 V
0.5
0.2
0.1
0.05
0.02
0.01
1
Pulse Test
3 10 30 100 300 1000
Drain Current I_D (A)