HAT2187WP Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2187WP
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V_(BR)DSS
200
Zero gate voltage drain current
I_DSS
—
Gate to source leak current
I_GSS
—
Gate to source cutoff voltage
V_GS(off)
3.0
Forward transfer admittance
|yfs|
8
Static drain to source on state
resistance
R_DS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Total gate charge
Qg
—
Gate to Source charge
Qgs
—
Gate to drain charge
Qgd
—
Body-drain diode forward voltage
V_DF
—
Body-drain diode reverse recovery time
trr
—
Notes: 4. Pulse test
Typ
—
—
—
—
14
0.084
Max
—
1
±0.1
4.5
—
0.094
Unit
V
µA
µA
V
S
Ω
(Ta = 25°C)
Test conditions
I_D = 10 mA, V_GS = 0
V_DS = 200 V, V_GS = 0
V_GS = ±30 V, V_DS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 8.5 A, V_DS = 10 V ^Note4
I_D = 8.5 A, V_GS = 10 V^Note4
1200
—
pF V_DS = 25 V
220
—
pF ^VGS ^{= 0}
19
—
pF ^{f = 1 MHz}
31
—
ns I_D = 8.5 A
37
—
ns ^VGS ^{= 10 V}
69
—
ns ^{RL = 11.8 Ω}
8
—
ns ^{Rg = 10 Ω}
26
—
nC V_DD = 160 V
7
—
nC ^VGS ^{= 10 V}
10
—
nC ^{ID = 17 A}
0.9
1.4
V I_F = 17 A, V_GS = 0 ^Note4
130
—
ns I_F = 17 A, V_GS = 0
diF/dt = 100 A/µs
Rev.5.00, Sep.02,2005, page 2 of 6