HAT2137H Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2137H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
40
4V
Pulse Test
3.8 V
30
3.6 V
20
3.4 V
10
V_GS = 3.2 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
200
I_D = 50 A
100
20 A
0
0
4
10 A
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.4.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
500
100
10
Operation
inDC ^{POWpe=ra1ti10onmm1ss00}
10
µ_s
µ_s
1 _{this area is}
limited by R_{DS (on)}
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
25°C
Tc = 75°C
10
–25°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
300
100
30
10
V_GS = 7 V
3
10 V
1
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)