HAT2137H Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2137H
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID (pulse) ^{Note 1}
IDR
IAP ^{Note 3}
EAR ^{Note 3}
Pch ^{Note 2}
Tch
Tstg
Value
40
±20
45
180
45
30
72
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 4. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
40
—
—
±20 —
—
—
— ±10
—
—
1
2.0 — 3.5
— 3.8 4.8
— 4.4 6.0
38 64 —
— 6200 —
— 780 —
— 410 —
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±16 V, VDS = 0
µA VDS = 40 V, VGS = 0
V VDS = 10 V, ID = 1 mA
mΩ ID = 22.5 A, VGS = 10 V ^{Note 4}
mΩ ID = 22.5 A, VGS = 7 V ^{Note 4}
S
ID = 22.5 A, VDS = 10 V ^{Note 4}
pF VDS = 10 V
pF VGS = 0
pF ^{f = 1 MHz}
Qg
—
95
—
nC VDD = 10 V
Qgs
—
24
—
nC VGS = 10 V
Qgd
—
14
—
nC ID = 45 A
td (on)
tr
td (off)
tf
VDF
trr
—
27
—
ns VGS = 10 V, ID = 22.5 A
—
50
—
ns VDD ≅ 10 V
—
90
—
ns ^RL ^{= 0.44 Ω}
—
14
—
ns ^{Rg = 4.7 Ω}
— 0.84 1.10
V
IF = 45 A, VGS = 0 ^{Note 4}
—
40
—
ns IF = 45 A, VGS = 0
diF/dt = 100 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 7