HAT2092R Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2092R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
50
10 V
4.5 V
4V
40
Pulse Test
30
3.5 V
20
V_GS = 3 V
10
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
I_D = 10 A
0.08
5A
0.04
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
500
100
10 µs
10
1
DC _Oper^P_atW_ion=(P1W0¹
Operation in
this area is
100 _µs
ms
ms
< ₁^N₀^ot_{se) 4}
0.1 ^{limited by RDS(on)}
Ta = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
25°C
-25°C
10
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
V_GS= 4.5 V
10
10 V
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I_D (A)
Rev.3.00 Jan. 13, 2005 page 3 of 7