HAT2092R Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2092R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
Outline
SOP-8
8 ^{7 65}
1 ²³⁴
78
DD
2
4
G
G
S1
MOS1
56
DD
S3
MOS2
REJ03G0511-0300
(Previous ADE-208-1236A(Z))
Rev.3.00
Jan.13.2005
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DSS
30
Gate to source voltage
V_GSS
±20
Drain current
Drain peak current
I_D
11
I_{D(pulse)Note1}
88
Body–drain diode reverse drain current
I_DR
11
Channel dissipation
Pch ^Note2
2
Channel dissipation
Pch ^Note3
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.3.00 Jan. 13, 2005 page 1 of 7