HAF2005 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

HAF2005
Electrical Characteristics
Drain current
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Output capacitance
Symbol
ID1
ID2
V (BR) DSS
V (BR) GSS
V (BR) GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS (op) 1
IGS (op) 2
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Coss
Min
15
—
60
16
–2.5
—
—
—
—
—
—
—
1.0
—
—
8
—
Typ Max
—
—
—
10
—
—
—
—
—
—
— 100
—
50
—
1
— –100
0.8
—
0.35 —
—
10
— 2.25
25
33
15
20
16
—
940 —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
td (on)
tr
td (off)
tf
VDF
trr
— 10.7 —
—
66
—
— 15.5 —
—
19
—
—
1
—
— 200 —
Over load shut down operation time ^Note4
tos1
—
1
—
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
Unit
A
mA
V
V
V
µA
µA
µA
µA
mA
mA
µA
V
mΩ
mΩ
S
pF
µs
µs
µs
µs
V
ns
ms
(Ta = 25°C)
Test Conditions
VGS = 3.5 V, VDS = 2 V
VGS = 1.2 V, VDS = 2 V
ID = 10 mA, VGS = 0
IG = 300 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 20 A, VGS = 4 V ^{Note 3}
ID = 20 A, VGS = 10 V ^{Note 3}
ID = 20 A, VDS = 10 V ^{Note 3}
VDS = 10 V, VGS = 0
f = 1 MHz
ID = 20 A
VGS = 5 V
RL = 1.5 Ω
IF = 40 A, VGS = 0
IF = 40 A, VGS = 0
diF/dt = 50 A/µs
VGS = 5 V, VDD = 16 V
Rev.4.00 Sep 07, 2005 page 3 of 7