HAF2005 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

HAF2005
Silicon N Channel MOS FET Series
Power Switching
REJ03G1136-0400
(Previous: ADE-208-688B)
Rev.4.00
Sep 07, 2005
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shut-down circuit
• Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
123
G
Gate resistor
Tempe-
rature
Sensing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
1. Gate
2. Drain
3. Source
Rev.4.00 Sep 07, 2005 page 1 of 7