H5N2803PF Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N2803PF
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
8V
Pulse Test
6.5 V
80
6V
60
5.5 V
40
20
V_GS = 5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
4
Pulse Test
3
I_D = 50 A
2
30 A
1
15 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
1000
300
100
30
1
ms
100
10
µ_s
µ_s
10
Operation in
3 _{this area is}
1 ^{limited by RDS(on)}
0.3
PW = 10 ms
(1shot)
0.1
0.03
Ta = 25°C
DC Operation
(Tc = 25°C)
0.01
1 3 10 30 100 300
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
100
V_DS = 10 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.1
V_GS = 10 V, 15 V
0.05
0.02
0.01
0.005
0.002
0.001
1
Pulse Test
3 10 30 100 300 1000
Drain Current I_D (A)
Rev.1.00, Aug.05.2004, page 3 of 6