H5N2803PF Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N2803PF
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
TO-3PFM
D
REJ03G0395-0100
Rev.1.00
Aug.05.2004
G
S
1
23
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
I_APNote3
E_ARNote3
Pch ^Note2
θch-c
Tch
Tstg
Ratings
280
±30
30
120
30
120
15
13.6
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.1.00, Aug.05.2004, page 1 of 6