CT40KM-8H_05 Datasheet, PDF (3/5 Pages) Renesas Technology Corp – Nch IGBT for Strobe Flasher

CT40KM-8H
Application Example
IXe
Vtrig
CM
+
–
Trigger Signal Vtrig
VCM
RG
VCE
VG
IGBT
IGBT
V_G
Gate Voltage
V_CM
I_CP
C_M
V_GE
Recommended Operation
Conditions
330 V
180 A
1200 µF
28 V
Maximum Operation
Conditions
350 V
200 A
1500 µF
—
Xe Tube Current IXe
Precautions on Usage
1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
peak reverse gate current during turn-off must become less than 1 A. (In general, when R_G(off) = 30 Ω, it is satisfied.)
2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
3. The operation life should be endured 5,000 shots under the charge current (I_Xe ≤ 200 A : full luminescence
condition) of main capacitor (C_M = 1500 µF) which can endure repeated discharge of 5,000 times. Repetition period
under full luminescence condition is over 3 seconds.
4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
Rev.2.00, Jul. 07,.2005, page 3 of 4