CT40KM-8H_05 Datasheet, PDF (2/5 Pages) Renesas Technology Corp – Nch IGBT for Strobe Flasher

CT40KM-8H
Electrical Characteristics
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Symbol
V_(BR)CES
I_CES
I_GES
V_GE(th)
Min.
450
—
—
—
Typ.
—
—
—
—
Max.
—
10
±0.1
7.0
Unit
V
µA
µA
V
(Tj = 25°C)
Test conditions
I_C = 1 mA, V_GE = 0 V
V_CE = 400 V, V_GE = 0 V
V_GE = ±40 V, V_CE = 0 V
V_CE = 10 V, I_C = 1 mA
Performance Curves
Maximum Pulse Collector Current
200
CM = 1500µF
Tc = 70°C
160
RG = 30Ω
Single pulse
120
80
40
0
0
10 20 30 40 50
Gate-Emitter Voltage V_GE (V)
Rev.2.00, Jul. 07,.2005, page 2 of 4