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BCR4CM-16LH_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – 800V - 4A - Triac Medium Power Use
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BCR4CM-16LH
Performance Curve
Maximum On-State Characteristics
102
Tj = 25°C
101
100
10−1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
On-State Voltage (V)
Gate Characteristics (I, II and III)
102
VGM = 10V PG(AV) = 0.3W
101
PGM = 3W
VGT = 1.5V
IGM = 2A
100
IGT = 35mA
IGTitem1 = 10mA
10−1
101
VGD = 0.1V
102
103
104
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
103
Typical Example
102
VD = 6V
RL = 6Ω
101
–40 0
40
80 120 160
Junction Temperature (°C)
R07DS0255EJ0200 Rev.2.00
Feb 25, 2013
Preliminary
Rated Surge On-State Current
40
35
30
25
20
15
10
5
0
100
101
102
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
103
Typical Example
102
IFGT I
VD = 6V
RL = 6Ω
101
–40 0
IRGT I
IRGT III
40 80 120 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
4.0
3.2
2.4
1.6
0.8
0
10−1
100
101
102
Conduction Time (Cycles at 60Hz)
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