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BCR08DS-14A_13 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – 700V-0.8A-Triac Low Power Use
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BCR08DS-14A
Performance Curves
Maximum On-State Characteristics
101
Tj = 25°C
100
10−1
1.0 1.5 2.0 2.5 3.0 3.5 4.0
On-State Voltage (V)
Gate Characteristics
101
VGM = 6V
PGM = 1W
VGT = 2V
PG(AV) =
0.1W
100
IFGT I,
IRGT I, IRGT III
IGM =
0.5A
10−1
VGD = 0.2V
101
102
103
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
103
Typical Example
102
101
–40 0
40 80 120 160
Junction Temperature (°C)
R07DS0258EJ0200 Rev.2.00
Aug 07, 2013
Preliminary
Rated Surge On-State Current
10
8
6
4
2
0
100
101
102
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
103
Typical Example
102
IFGT I ,IRGT I,IRGTIII
VD=6V
RL=6Ω
101
–40 0
IFGT III
40 80 120 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
30
25
20
15
10
5
0
10−1
100
101
102
Conduction Time (Cycles at 60Hz)
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