BCR08DS-14A_13 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – 700V-0.8A-Triac Low Power Use

BCR08DS-14A
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state
current
On-state voltage
Gate trigger
Ι
voltage^Note2
ΙΙ
ΙΙΙ
IV
Gate trigger
Ι
current^Note2
ΙΙ
ΙΙΙ
IV
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-
state commutating
voltage ^Note4
Critical-rate of rise of off-
state voltage ^Note5
Symbol
I_DRM
V_TM
V_FGTΙ
V_RGTΙ
V_{RGTΙΙΙ}
V_{FGTΙΙΙ}
I_FGTΙ
I_RGTΙ
I_{RGTΙΙΙ}
I_{FGTΙΙΙ}
V_GD
R_{th (j-c)}
(dv/dt)c
dv/dt
BCR08DS-14A#B10
Min. Typ. Max.
—
—
1.0
—
—
2.0
—
—
2.0
—
—
2.0
—
—
2.0
—
—
—
—
—
5
—
—
5
—
—
5
—
—
—
0.2
—
—
—
—
25
0.5
—
—
200 —
—
BCR08DS-14A#B12
Min. Typ. Max.
—
—
1.0
—
—
2.0
—
—
2.0
—
—
2.0
—
—
2.0
—
—
2.0
—
—
10
—
—
10
—
—
10
—
—
10
0.2
—
—
—
—
25
0.5
—
—
Unit Test conditions
mA Tj = 125°C
V_DRM applied
V Tc = 25°C, ITM =1.2 A
instantaneous
measurement
V Tj = 25°C, VD = 6 V
V ^{RL = 6 Ω, RG = 330 Ω}
V
V
mA Tj = 25°C, VD = 6 V
mA ^{RL = 6 Ω, RG = 330 Ω}
mA
mA
V
°C/W
V/μs
Tj = 125°C
V_D = 1/2 V_DRM
Junction to case^Note3
Tj = 125°C
200
—
— V/μs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T₂ tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below.
Test conditions
Commutating voltage and current waveforms (inductive
load)
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
V_D = 400 V
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
V_D
5. Test conditions of the critical-rate of rise of off-state voltage are shown in the table below.
Test conditions
Off-state voltage waveforms
1. Junction temperature
Tj = 125°C
2. Off-state voltage waveform
Linear waveform
3. Peak off-state voltage
V_D = 200 V
4. Gate open
dv/dt=0.8VD/(t2 - t1)
R07DS0258EJ0200 Rev.2.00
Aug 07, 2013
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