3SK323 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

3SK323
Main Characteristics
Maximum Channel Power
Dissipation Curve
400
300
200
100
0
50
100
150
200
Ambient Temperature Ta (°C)
Note 3 : When using the glass epoxy board
(50 mm x 40 mm x 1 mm )
Drain Current vs.
Gate1 to Source Voltage
20
V_DS =3.5 V _{3.0 V}
2.5 V
15
2.0 V
1.5 V
10
5
1.0 V
0
V_G2S = 0.5 V
0.0
0.5
1.0
1.5
2.0
Gate1 to Source Voltage V_G1S (V)
Forward Transfer Admittance
vs. Gate1 to Source Voltage
50
VDS = 3.5 V
40
30
V_G2S = 3 V
2.5 V
20
10
2V
1.5 V
1.0 V
0
0.0
0.5
1.0
1.5
2.0
Gate1 to Source Voltage V_G1S (V)
Rev.1.00, May 18,2005, page 3 of 7
Typical Output Characteristics
20
1.3 V
V_G2S = 3 V
1.2 V
1.1 V
15
1.0 V
10
0.9 V
5
0.8 V
V_G1S = 0.6 V
0.7 V
0
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Drain Current vs.
Gate1 to Source Voltage
20
V_DS = 5 V 3.0 V
2.5 V
2.0 V
15
1.5 V
10
5
1.0 V
0
V_G2S = 0.5 V
0.0
0.5
1.0
1.5
2.0
Gate1 to Source Voltage V_G1S (V)
Forward Transfer Admittance
vs. Gate1 to Source Voltage
50 _{VDS = 5 V}
V_G2S = 3 V
40
30
20
2.5 V
10
1.5 V
0
0.0
0.5
1.0 V
1.0
1.5
Gate1 to Source Voltage V_G1S
2V
2.0
(V)