2SK1859 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1859
Main Characteristics
Power vs. Temperature Derating
90
60
30
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
10
10 V
Pulse Test
8
6V
5.5 V
6
5V
4
4.5 V
2
V_GS = 4 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
I_D = 5 A
12
8
2A
4
1A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
30
10
3
1
0.3
OilnipmetihtreaisdtiaobrnyeaRis^DS
(on)
DC
PW
= ₁₀
Operation _(Tc
1 _ms
ms _{(1 Shot)}
= _25°C)
0.1 _{Ta = 25°C}
0.05
1 3 10 30 100 300
1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
V_DS = 20 V
Pulse Test
4
3
2
75°C
Ta = 25°C
1
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
V_GS = 10 V
2
1
0.5
0.2
15 V
0.5 1 2
5 10 20
Drain Current I_D (A)