2SK1832 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET

2SK1832
Main Characteristics
Power vs. Temperature Derating
75
50
25
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
20
10 V _{7 V}
6V
16
Pulse Test
12
5V
8
4
V_GS = 4 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
4
5A
2
I_D = 2 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
30
µ
10
PW
3
1
0.3
OabrypeRear_Dais_Stiloim(noinitne)^D_dt^Chi^Os^{perat=ion10(Tm}_c ^s₌⁽₂¹₅^s_°C^ho₎ ^t)
Ta = 25°C
0.1
0.05
1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
–25°C
16
V_DS = 20 V
Pulse Test
T_C = 25°C
12
75°C
8
4
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
V_GS = 10 V
1.0
0.5
15 V
0.2
0.1
0.05
0.5 1.0 2
5 10 20
50
Drain Current I_D (A)