2SK1773 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1773
Main Characteristics
Power vs. Temperature Derating
160
120
80
40
0
50
100
150
200
Case Temperature T_C (°C)
Typical Output Characteristics
10
10 V
8V
5.5 V
8
Pulse Test
6
5V
4
4V
2
V_GS = 3.5 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
5A
8
4
2A
I_D = 1 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
30 Operation in this area
is limited by R_DS(on)
10
100 _µs
3
1
0.3
0.1 ^{Ta = 25°C}
0.05
10 30 100 300 1000 3000 10000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
4 ^VDS ^{= 10 V}
Pulse Test
3
2
Tc = 75°C
1
25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
2
V_GS = 10 V
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)