2SK1637 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1637
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
5
10 V
4
6V
5V
Pulse Test
4.5 V
3
2
1
4V
V_GS = 3.5 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
I_D = 5 A
12
8
2A
4
1A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
30
10
3
1
0.3
0.1
Ta
DC
=25°C
OpePraWtio=n1(0T_{Cm1=sm2(s15°SCh)ot)}
0.05
13
10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
V_DS = 20 V
Pulse Test
4
3
2
T_C = –25°C
25°C
1
75°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
V_GS = 10 V
15 V
2
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)