2SK1637 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1637
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch^*2
Tch
Tstg
Item
Symbol Min
Typ
Drain to source breakdown voltage V(BR)DSS 600
—
Gate to source breakdown voltage V(BR)GSS ±30
—
Gate to source leak current
IGSS
—
—
Zero gate voltage drain current
IDSS
—
—
Gate to source cutoff voltage
Static drain to source on state
resistance
VGS(off)
2.0
—
RDS(on)
—
1.8
Forward transfer admittance
Input capacitance
|yfs|
2.2
3.5
Ciss
—
600
Output capacitance
Coss
—
140
Reverse transfer capacitance
Crss
—
25
Turn-on delay time
td(on)
—
8
Rise time
tr
—
30
Turn-off delay time
td(off)
—
60
Fall time
tf
—
35
Body to drain diode forward voltage VDF
—
0.9
Body to drain diode reverse recovery trr
—
300
time
Note: 3. Pulse test
Ratings
600
±30
4
16
4
35
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
—
—
±10
250
3.0
2.4
—
—
—
—
—
—
—
—
—
—
(Ta = 25°C)
Unit
Test conditions
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 500 V, VGS = 0
V ID = 1 mA, VDS = 10 V
Ω
ID = 2 A, VGS = 10 V *³
S
ID = 2 A, VDS = 10 V *³
pF VDS = 10 V, VGS = 0,
pF ^{f = 1 MHz}
pF
ns ID = 2 A, VGS = 10 V,
ns ^RL ^{= 15 Ω}
ns
ns
V IF = 4 A, VGS = 0
ns IF = 4 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6