2SK1334 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1334
Main Characteristics
Power vs. Temperature Derating
1.2
Test Condition: When using alumina
ceramic board
(12.5 × 20 × 0.7 mm)
0.8
0.4
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
2.0
10 V
1.6
8 V _{Pulse Test}
7V
1.2
6V
0.8
5V
0.4
V_GS = 3 V
4V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
I_D = 2 A
8
4
1A
0.5 A
0
4
8
12 16 20
Drain to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
OpiesrlaimtioitnedinbDtyhCiRs
a_D^r_S^e₍^a_on)
PW ₁
Operat=io1n0(Tms
100
ms
10
µ_s
µ_s
(1 _Shot)
C _{= 25°C)}
Ta = 25°C
0.005
1 3 10 30 100
300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
2.0
1.6
V_DS = 10 V
Pulse Test
1.2
0.8
0.4
75°C
T_C = 25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
V_GS = 10 V
15 V
2
1
0.5
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)