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2SK1334 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1334
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse)*1
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. When using the alumina ceramic board (12.5 Ã 20 Ã 0.7 mm)
Ratings
200
±20
1
2
1
1
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage V(BR)DSS 200
â
â
V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20
â
â
V IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
â
â
±10
µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
â
â
50
µA VDS = 160 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
VGS(off)
2.0
â
4.0
RDS(on)
â
â
2.5
3.8
4.5
7.0
|yfs|
0.4
0.6
â
V ID = 1 mA, VDS = 10 V
⦠ID = 0.5 A, VGS = 10 V *3
â¦
ID = 2 A, VGS = 10 V *3
S
ID = 0.5 A, VDS = 10 V *3
Input capacitance
Ciss
â
80
â
pF VDS = 10 V, VGS = 0,
Output capacitance
Coss
â
40
â
pF f = 1 MHz
Reverse transfer capacitance
Crss
â
7
â
pF
Turn-on delay time
Rise time
td(on)
â
5
â
ns ID = 0.5 A, VGS = 10 V,
tr
â
8
â
ns RL = 60 â¦
Turn-off delay time
td(off)
â
10
â
ns
Fall time
tf
â
7
â
ns
Body to drain diode forward voltage VDF
â
1.0
â
V IF = 1 A, VGS = 0
Body to drain diode reverse recovery trr
time
â
75
â
ns IF = 1 A, VGS = 0,
diF/dt = 50 A/µs
Notes: 3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
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