2SK1301 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1301
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
20
10 V
16
4V
7V
Pulse Test
3.5 V
12
3V
8
4
2.5 V
V_GS = 2.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.5
20 A
2.0
Pulse Test
1.5
10 A
1.0
I_D = 5 A
0.5
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
30
10
1 _ms
3
1
0.3 Operation in this area
is limited by R_{DS (on)}
Ta = 25°C
0.1
1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
75°C
T_C = 25°C
4
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2
V_GS = 4 V
10 V
0.1
0.05
0.02
Pulse Test
0.01
0.005
1
2
5 10 20 50 100
Drain Current I_D (A)