2SK1153 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1153, 2SK1154
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
5
10 V
Pulse Test ^{8 V}
4
3
5.5 V
6V
5V
2
4.5 V
1
V_GS = 4 V
0
4
8
12
16 20
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
12
8
3A
4
2A
I_D = 1 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
50
20
10
5
2
0.1
0.5
0.2
0.01
OpaerrbeayatioRisn^{DliiSmn (itotheni)ds}
Ta = 25°C
DC
100
Operation1(Tms
µ_s
C _{= 25°C)}
2SK1154
2SK1153
0.05
1 3 10 30 100 300
1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
4 ^{VDS = 10 V}
Pulse Test
3
–25°C
T_C = 25°C
75°C
2
1
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
20
Pulse Test
10
V_GS = 10 V
5
15 V
2
1.0
0.5
0.1 0.2
0.5 1.0 2
5 10
Drain Current I_D (A)