2SK1153 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1153, 2SK1154
Absolute Maximum Ratings
Item
Drain to source voltage
2SK1153
2SK1154
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*¹
IDR
Pch*²
Tch
Tstg
Item
Symbol Min
Typ
Drain to source
2SK1153 V(BR)DSS
450
—
breakdown voltage
2SK1154
500
Gate to source breakdown voltage
V(BR)GSS
±30
—
Gate to source leak current
IGSS
—
—
Zero gate voltage drain 2SK1153
IDSS
—
—
current
2SK1154
Gate to source cutoff voltage
VGS(off)
2.0
—
Static drain to source on 2SK1153 RDS(on)
—
2.0
state resistance
2SK1154
—
2.2
Forward transfer admittance
|yfs|
1.5
2.5
Input capacitance
Ciss
—
330
Output capacitance
Coss
—
90
Reverse transfer capacitance
Crss
—
15
Turn-on delay time
td(on)
—
7
Rise time
tr
—
20
Turn-off delay time
td(off)
—
30
Fall time
tf
—
20
Body to drain diode forward voltage
VDF
—
0.9
Body to drain diode reverse recovery
trr
time
—
300
Note: 3. Pulse test
Ratings
450
500
±30
3
12
3
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
—
—
±10
250
3.0
2.8
3.0
—
—
—
—
—
—
—
—
—
—
(Ta = 25°C)
Unit
Test conditions
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±25 V, VDS = 0
µA VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
V ID = 1 mA, VDS = 10 V
Ω ID = 2 A, VGS = 10 V *³
S ID = 2 A, VDS = 10 V *³
pF VDS = 10 V, VGS = 0,
pF ^{f = 1 MHz}
pF
ns ID = 2 A, VGS = 10 V,
ns ^RL ^{= 15 Ω}
ns
ns
V IF = 3 A, VGS = 0
ns IF = 3 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6