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2SK1070_15 Datasheet, PDF (3/6 Pages) Renesas Technology Corp – Silicon N-Channel Junction FET | |||
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2SK1070
Forward Transfer Admittance
vs. Gate to Source Voltage
50
VDS = 5 V
40
f = 1 kHz
30
20
10
0
â1.25 â1.0 â0.75 â0.5 â0.25 0
Gate to Source Voltage VGS (V)
Input Capacitance vs.
Drain to Source Voltage
100
f = 1 MHz
50
VGS = 0
20
10
5
2
1
0.1 0.2
0.5 1.0 2
5 10
Drain to Source Voltage VDS (V)
12
10
8
6
4
2
0
10
Noise Figure vs.
Signal Source Resistance
VDS = 5 V
ID = 1 mA
f = 1 kHz
100
1k
10 k
Signal Source Resistance Rg (Ω)
100 k
Preliminary
1,000
100
Gate Cutoff Current
vs. Gate to Source Voltage
VDS = 0
10
1.0
0.1
0
â10 â20 â30 â40 â50
Gate to Source Voltage VGS (V)
Reverse Transfer Capacitance
vs. Drain to Source Voltage
100
f = 1 MHz
50
VGS = 0
20
10
5
2
1
0.1 0.2
0.5 1.0 2
5 10
Drain to Source Voltage VDS (V)
12
10
8
6
4
2
0
10
Noise Figure vs. Frequency
VDS = 5 V
ID = 1 mA
Rg = 1 kΩ
100
1k
10 k
Frequency f (Hz)
100 k
R07DS0282EJ0400 Rev.4.00
Jan 10, 2014
Page 3 of 5
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