2SK1070_15 Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon N-Channel Junction FET

2SK1070
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit
Test conditions
Gate cutoff current
I_GSS
—
—
–10
nA V_GS = –15 V, V_DS = 0
Gate to source breakdown voltage V_(BR)GSS –22
—
Drain current
I_DSS*¹
12
—
—
V I_G = –10 μA, V_DS = 0
40
mA V_DS = 5 V, V_GS = 0, Pulse test
Gate to source cutoff voltage
V_GS(off)
0
—
–2.5
V V_DS = 5 V, I_D = 10 μA
Forward transfer admittance
|y_fs|
20
30
—
mS V_DS = 5 V, V_GS = 0, f = 1 kHz
Input capacitance
Ciss
—
9
—
pF V_DS = 5 V, V_GS = 0, f = 1 MHz
Notes: 1. The 2SK1070 is grouped by I_DSS as follows.
Grade
C
D
E
Mark
PIC
PID
PIE
I_DSS
12 to 22
18 to 30
27 to 40
Main Characteristics
Maximum Channel Dissipation Curve
150
100
50
Typical Output Characteristics
20
V_GS ^{= 0 V}
16
–0.1
12
–0.2
–0.3
8
–0.4
–0.5
4
–0.6
0
50
100
150
Ambient Temperature Ta (ºC)
Typical Transfer Characteristics
20
V_DS = 5 V
16
12
8
4
0
–1.25 –1.0 –0.75 –0.5 –0.25 0
Gate to Source Voltage V_GS (V)
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Forward Transfer Admittance
vs. Drain Current
100
V_DS = 5 V
f = 1 kHz
10
1.0
0.1
0.1
1.0
10
100
Drain Current I_D (mA)
R07DS0282EJ0400 Rev.4.00
Jan 10, 2014
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