2SJ76 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ76, 2SJ77, 2SJ78, 2SJ79
Main Characteristics
Power vs. Temperature Derating
60
40
20
0
0
50
100
150
Case Temperature Tc (°C)
Typical Output Characteristics
–50
Tc = 25°C
–1.0
–40
–0.9
–0.8
–30
–0.7
–0.6
–20
–0.5
–0.4
–10
VGS = –0.1 V ^–0.2
–0.3
0
0 –20 –40 –60 –80 –100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
–100
V_DS = –20 V
–80
–60
Tc = –25°C
25°C
–40
75°C
–20
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Gate to Source Voltage V_GS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
Typical Output Characteristics
–500
Tc = 25°C
–4.5
–400
–4.0
–3.5
–300
–3.0
–200
–100
0
0
–2.5
–2.0
–1.5
VGS = –0.5 V –1.0
–4 –8 –12 –16 –20
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
–500
V_DS = –20 V
–400
–300
–200
–100
Tc = –25°C
25°C
75°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Forward Transfer Admittance vs.
Drain Current
200
100
50
20
10
5
Tc = 25°C
2
V_DS = –20 V
–2 –5 –10 –20 –50 –100 –200
Drain Current I_D (mA)