2SJ76 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ76, 2SJ77, 2SJ78, 2SJ79
Absolute Maximum Ratings
Item
Drain to source voltage
2SJ76
2SJ77
2SJ78
2SJ79
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Symbol
VDSX
VGSS
ID
IDR
Pch
Pch ^{Note 1}
Tch
Tstg
Value
–140
–160
–180
–200
±15
–500
–500
1.75
30
150
–45 to +150
(Ta = 25°C)
Unit
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown
voltage
2SJ76
2SJ77
2SJ78
2SJ79
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Note: 2. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSX –140 —
—
V VGS = 2 V, ID = –1 mA
–160 —
—
V
–180 —
—
V
–200 —
—
V
V (BR) GSS ±15
—
—
V IG = ±10 µA, VDS = 0
VGS (on) –0.2 — –1.5
V ID = –10 mA, VDS = –10 V ^{Note 2}
VDS (sat)
—
— –2.0
V ID = –10 mA, VGS = 0 ^{Note 2}
|yfs|
20
35
—
mS ID = –10 mA, VDS = –20 V ^{Note 2}
Ciss
— 120 —
pF VDS = –10 V, ID = –10 mA,
Crss
— 4.8 — pF f = 1 MHz
Rev.2.00 Sep 07, 2005 page 2 of 5