2SD1101 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SD1101
Main Characteristics
Maximum Collector Dissipation Curve
150
100
50
0
50
100
150
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
1,000
300
V_CE = 1 V
100
30
Ta = 75°C 25°C
10
3
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V_BE (V)
Collector to Emitter Saturation
Voltage vs. Collector Current
0.5
I_C = 10 I_B
0.4
0.3
0.2
Ta = 75°C 25°C
0.1
0
1 3 10 30 100 300 1,000
Collector Current I_C (mA)
Typical Output Characteristics
500
2.5
400
2.0
300
1.5
1.0
200
0.5 mA
100
I_B = 0
0
0.4 0.8 1.2 1.6 2.0
Collector to Emitter Voltage V_CE (V)
5,000
2,000
1,000
500
200
100
50
DC Current Transfer Ratio vs.
Collector Current
V_CE = 1 V
Pulse
Ta = 75°C
25°C
20
10
5
1 3 10 30 100 300 1,000
Collector Current I_C (mA)
Gain Bandwidth Product vs.
Collector Current
400
V_CE = 1 V
300
200
100
0
10 20
50 100 200 500 1,000
Collector Current I_C (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5