2SD1101 Datasheet, PDF(2/6 Page) Hitachi Semiconductor

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2SD1101 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

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2SD1101

Electrical Characteristics

(Ta = 25Â°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

V IC = 10 ÂµA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

V IC = 1 mA, RBE = â

Emitter to base breakdown voltage

V(BR)EBO

V IE = 10 ÂµA, IC = 0

Collector cutoff current

ICBO

1.0

ÂµA VCB = 20 V, IE = 0

DC current transfer ratio

hFE

120

240

VCE = 1 V, IC = 0.15 A

Collector to emitter saturation voltage

VCE(sat)

0.5

V IC = 0.5 A, IB = 0.05 A

Base to emitter voltage

VBE

1.0

V VCE = 1 V, IC = 0.15 A

Rev.2.00 Aug 10, 2005 page 2 of 5

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