2SC5852 Datasheet, PDF (3/6 Pages) Renesas Technology Corp – Silicon NPN Epitaxial Planar

2SC5852
Main Characteristics
Maximum Collector Dissipation Curve
150
100
50
* Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
0
50
100
150
Ambient Temperature Ta (°C)
Typical Output Characteristics
5
50
4
40
3
30
2
20
1
10 µA
I_B = 0
0
4
8
12 16 20
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics (1)
20
V_CE = 6 V
16 ^{Pulse test}
12
8
4
0
0.6
0.7
0.8
Base to Emitter Voltage V_BE (V)
Rev.1.00 Aug 10, 2005 page 3 of 5
Typical Output Characteristics
20
300
275
250
225
16
200
175
150
125
12
8
100
75
P_{C = 150 mW}
50
4
25 µA
I_B = 0
0
4
8
12 16 20
Collector to Emitter Voltage V_CE (V)
DC Current Transfer Ratio vs.
Collector Current
120
V_CE = 6 V
Pulse test
100
80
60
40
20
0
0.1 0.2 0.5 1.0 2
5 10 20
Collector Current I_C (mA)
Typical Transfer Characteristics (2)
5
V_CE = 6 V
4
3
2
1
0
0.6
0.7
0.8
Base to Emitter Voltage V_BE (V)