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| 2SC5852 Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon NPN Epitaxial Planar | |||
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2SC5852
Electrical Characteristics
Item
Symbol Min
Collector to base breakdown voltage
V(BR)CBO
30
Collector to emitter breakdown voltage V(BR)CEO
20
Emitter to base breakdown voltage
V(BR)EBO
4
Collector cutoff current
ICEO

Emitter cutoff current
DC current transfer ratio
IEBO

hFE*1
60
Collector to emitter saturation voltage
VCE(sat)

Base to emitter voltage
VBE

Gain bandwidth product
fT

Collector output capacitance
Cob

Notes: 1. The 2SC5852 is grouped by hFE as follows.
Grade
B
C
Mark
QB
QC
hFE
60 to 120
100 to 200
Typ






0.17
0.72
940
0.9
Max



0.5
0.5
200




Unit
V
V
V
µA
µA
V
V
MHz
pF
(Ta = 25°C)
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = â
IE = 10 µA, IC = 0
VCE = 10 V, RBE = â
VEB = 2 V, IC =0
VCE = 6 V, IC = 1 mA
IC = 20 mA, IB = 4 mA
VCE = 6 V, IC = 1 mA
VCE = 6V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
Rev.1.00 Aug 10, 2005 page 2 of 5
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