2SC5849 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial VHF/UHF wide band amplifier

2SC5849
Main Characteristics
Collector Power Dissipation Curve
100
80
60
40
20
0
50 100 150 200 250
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
25
V_CE = 1 V
20
15
10
5
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V_BE (V)
Collector Output Capacitance vs.
Collector to Base Voltage
2.0
I_E = 0
f = 1 MHz
1.6
1.2
0.8
0.4
0
0.5 1.0 1.5 2.0 2.5 3.0
Collector to Base Voltage V_CB (V)
Rev.1.00 Aug 10, 2005 page 3 of 8
Typical Output Characteristics
20
180 ^µA
16
160 ^µA
140 ^µA
120 ^µA
12
100 ^µA
80 µA
8
60 µA
40 µA
4
I_B = 20 µA
0
1 2 3 4 56
Collector to Emitter Voltage V_CE (V)
DC Current Transfer Ratio vs.
Collector Current
200
V_CE = 1 V
100
0
0.1
1.0
10
100
Collector Current I_C (mA)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
1.0
Emitter ground
f = 1 MHz
0.8
0.6
0.4
0.2
0
0.5 1.0 1.5 2.0 2.5 3.0
Collector to Base Voltage V_CB (V)