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2SC5849 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial VHF/UHF wide band amplifier
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2SC5849
Electrical Characteristics
Item
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Reverse transfer capacitance
Collector output capacitance
Gain bandwidth product
Gain bandwidth product
Power gain
Noise figure
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V(BR)CBO
15


V IC = 10 µA, IE = 0
ICBO


0.1
µA VCB = 15 V, IE = 0
ICEO


0.1
µA VCE = 6.0 V, RBE = ∞
IEBO


0.1
µA VEB = 1.5 V, IC = 0
hFE
90 110 140
VCE = 1 V, IC = 5 mA
Cre

0.5

pF VCE = 1 V, Emitter ground,
f = 1 MHz
Cob
fT(1)
fT(2)
PG

0.85 1.15
pF VCB = 1 V, IE = 0, f = 1 MHz
1.0 4.0

GHz VCE = 1 V, IC = 5 mA

9.0

GHz VCE = 1 V, IC = 30 mA
10
13

dB VCE = 1 V, IC = 5 mA,
f = 900 MHz
NF

1.1
1.8
dB VCE = 1 V, IC = 5 mA,
f = 900 MHz
Rev.1.00 Aug 10, 2005 page 2 of 8
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