2SC5594 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Low Noise Amplifier

2SC5594
Main Characteristics
Maximum Collector Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Collector Output Capacitance vs.
Collector to Base Voltage
1.0
I_E = 0
0.8
f = 1MHz
0.6
0.4
0.2
0
0.1 0.2 0.5 1 2
5 10
Collector to Base Voltage V_CB (V)
Power Gain vs. Collector Current
20
f = 1.8GHz
16
V_CE = 3 V
2V
1V
12
8
4
0
1
2
5 10 20 50 100
Collector Current I_C (mA)
Rev.2.00 Aug 10, 2005 page 3 of 7
DC Current Transfer Ratio vs.
Collector Current
200
V_CE = 3 V
100
2V
1V
0
12
5 10 20 50 100
Collector Current I_C (mA)
Gain Bandwidth Product vs.
Collector Current
50
40
30
V_CE = 3 V
2V
1V
20
10
0
12
5 10 20 50 100
Collector Current I_C (mA)
Noise Figure vs. Collector Current
5
V_CE = 1 to 3 V
4
f = 1.8GHz
3
2
1
0
12
5 10 20 50 100
Collector Current I_C (mA)