2SC5594 Datasheet, PDF(2/8 Page) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Low Noise Amplifier

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2SC5594 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Low Noise Amplifier

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2SC5594

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Noise figure

(Ta = 25Â°C)

Symbol Min Typ Max Unit

Test Conditions

V(BR)CBO

V IC = 10 ÂµA , IE = 0

ICBO

ÂµA VCB = 10 V , IE = 0

ICEO

ÂµA VCE = 4 V , RBE = â

IEBO

ÂµA VEB = 0.8 V , IC = 0

hFE

60 100 140

VCE = 2 V , IC = 20 mA

Cob

0.3 0.6

pF VCB = 2 V , IE = 0

f = 1 MHz

GHz VCE = 2 V , IC = 30 mA

f = 2 GHz

dB VCE = 2 V, IC = 30 mA

f = 1.8 GHz

1.2 1.6

dB VCE = 2 V, IC = 5 mA

f = 1.8 GHz

Rev.2.00 Aug 10, 2005 page 2 of 7

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