2SC4265 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4265
Main Characteristics
Maximum Collector Dissipation Curve
120
100
80
60
40
20
0
50
100
150
Ambient Temperature Ta (°C)
Gain Bandwidth Product
vs. Collector Current
2.0
1.6
1.2
0.8
0.4
0
1
V_CE = 10 V
2
5 10 20
50
Collector Current I_C (mA)
Reverse Transfer Capacitance
vs. Collector to Base Voltage
2.0
1.6
Emitter Common
f = 1 MHz
1.2
0.8
0.4
0
12
5 10 20
50
Collector to Base Voltage V_CB (V)
Rev.3.00 Aug 10, 2005 page 3 of 5
DC Current Transfer Ratio
vs. Collector Current
200
160
120
80
40
V_CE = 10 V
0
12
5 10 20
50
Collector Current I_C (mA)
Collector Output Capacitance
vs. Collector to Base Voltage
2.0
1.6
I_E = 0
f = 1 MHz
1.2
0.8
0.4
0
12
5 10 20
50
Collector to Base Voltage V_CB (V)
Base Time Constant
vs. Collector Current
20
16
V_CB = 10 V
f = 31.8 MHz
12
8
4
0
4
8
12 16 20
Collector Current I_C (mA)