2SC4265 Datasheet, PDF(2/6 Page) Hitachi Semiconductor

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2SC4265 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

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2SC4265

Electrical Characteristics

(Ta = 25Â°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

V IC = 10 ÂµA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

V IC = 1 mA, RBE = â

Collector cutoff current

ICBO

0.5

ÂµA VCE = 15 V, IE = 0

Emitter cutoff current

IEBO

ÂµA VEB = 3 V, IC = 0

Collector to emitter saturation voltage

VCE(sat)

1.0

V IC = 20 mA, IB = 4 mA

DC current transfer ratio

hFE

VCE = 10 V, IC = 10 mA

Collector output capacitance

Cob

1.5

pF VCB = 10 V, IE = 0, f = 1 MHz

Gain bandwidth product

600

MHz VCE = 10 V, IC = 10 mA

Rev.3.00 Aug 10, 2005 page 2 of 5

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