2SC4264 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4264
Main Characteristics
Maximum Collector Dissipation Curve
120
100
80
60
40
20
0
50
100
150
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
5
V_CE = 10 V
4
3
2
1
0
1
2
5 10 20
50
Collector Current I_C (mA)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
2.0
f = 1 MHz
1.6
Emitter Common
1.2
0.8
0.4
0
12
5 10 20
50
Collector to Base Voltage V_CB (V)
Rev.3.00 Aug 10, 2005 page 3 of 5
DC Current Transfer Ratio vs.
Collector Current
200
V_CE = 10 V
160
120
80
40
0
1
2
5 10 20
50
Collector Current I_C (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
2.0
f = 1 MHz
1.6
I_E = 0
1.2
0.8
0.4
0
1
2
5 10 20
50
Collector to Base Voltage V_CB (V)
Conversion Gain vs. Collector Current
20
V_CC = 6 V
f = 900 MHz
16
f_osc = 930 MHz
(0 dBm)
f_out = 30 MHz
12
8
4
0
2
4
6
8
10
Collector Current I_C (mA)